- Process gas available
- Vacuum
- With high frequency generator
- Painting / Plating
- Adhesion / Bonding
- Cultivation / Dental Care
- Cleaning / Sterilization
- Etching
- Thin film formation
- Hydrophobic
- Plasma durability test
- Lipophobic / Stain repellency (under development)
- Lipophilic (under development)
- For experimental use
- For manufacturing
Plasma Etcher CPE Series
Etching of SiO2 and Si, etc. Fabrication of fine circuits such as semiconductor integrated circuits.
Product Overview
■Compact
■Easy to use
■ Touch panel operation (auto, manual)
■High-precision etching of inorganic materials is possible
Specification
Device name: Plasma etcher
Model CPE-200A
External dimensions: 510mm(W)×760mm(D)×1090mm(H)
Discharge part dimensions: diameter 200mm (circular)
weight
Output adjustment : Yes
Gas system: 1 system (2 lines optional)
Gas Control Method Mass Flow Controller
Pressure regulating valve
Power supply AC100V,15A(50Hz/60Hz)