• Process gas available
  • Vacuum
  • With high frequency generator
  • Painting / Plating
  • Adhesion / Bonding
  • Cultivation / Dental Care
  • Cleaning / Sterilization
  • Etching
  • Thin film formation
  • Hydrophobic
  • Plasma durability test
  • For experimental use
  • For manufacturing

Plasma etcher with heating mechanism CPE-200AHM

Etching of SiO2 and Si and ashing of organic matter can be achieved at high speed and high efficiency by heating.

Product Overview

■Plasma etcher CPE series with stage heating is now available
■Capable of heating up to 400°C
■ Shortening processing time and accelerating endurance test
■Easy operation with touch panel (plasma operation unit)
■High-precision temperature control by PID control


Device name: With plasma etcher heating mechanism
Model CPE-200AHM
Dimensions: W560mm×D690mm×H1650mm
(Electrode stage) diameter 200mm
Irradiation range
Output adjustment
Stage heating Maximum temperature 400°C
Gas introduction: 2 systems
Power supply: single-phase 200V, 30A