- Process gas available
- Vacuum
- With high frequency generator
- Painting / Plating
- Adhesion / Bonding
- Cultivation / Dental Care
- Cleaning / Sterilization
- Etching
- Thin film formation
- Hydrophobic
- Plasma durability test
- For experimental use
- For manufacturing
Plasma etcher with heating mechanism CPE-200AHM
Etching of SiO2 and Si and ashing of organic matter can be achieved at high speed and high efficiency by heating.
Product Overview
■Plasma etcher CPE series with stage heating is now available
■Capable of heating up to 400°C
■ Shortening processing time and accelerating endurance test
■Easy operation with touch panel (plasma operation unit)
■High-precision temperature control by PID control
Specification
Device name: With plasma etcher heating mechanism
Model CPE-200AHM
Dimensions: W560mm×D690mm×H1650mm
(Electrode stage) diameter 200mm
Irradiation range
Output adjustment
Stage heating Maximum temperature 400°C
Gas introduction: 2 systems
Power supply: single-phase 200V, 30A
function